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VT2045CBP
www.vishay.com
Vishay General Semiconductor
Revision: 22-May-12
2
Document Number: 89364
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ?
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF
= 5 A
= 10 A 0.49 0.58
TA
= 25 °C
VF
(1)
0.44 -
V
IF
IF
= 5 A
= 10 A 0.41 0.52
TA
= 125 °C
0.33 -
IF
Reverse current per diode VR
= 45 V
TA
= 25 °C
= 125 °C 10 30 mA
IR
(2)
- 2000 μA
TA
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT2045CBP UNIT
Typical thermal resistance
per diode
per device 2.0R?JC
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB VT2045CBP-M3/4W 1.88 4W 50/tube Tube
2020
24
DC Forward Rectifed Current (A)
00
4
8
12
16
100 120 140 160 180 200
DC Forward Current atDC Forward Current at
Thermal EThermal Eqquilibriumuilibrium
Case Temperature (°C)
0
3
4
5
6
0246 10128
Average Forward Current (A)
Average Power Lo
ss
(W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = tp/T tp
T
1
2
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